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| SPP24N60C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in TO 220 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance VDS @ Tjmax RDS(on) ID 650 0.16 24.3 V A P-TO220-3-1 Type SPP24N60C3 Package P-TO220-3-1 Ordering Code Q67040-S4639 Marking 24N60C3 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 C TC = 100 C A 24.3 15.4 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V I D puls EAS 72.9 780 1 24.3 20 30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 24.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25C A V W C VGS Ptot T j , T stg 240 -55... +150 Operating and storage temperature Rev. 2.0 Page 1 2004-03-02 SPP24N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 , ID = 24.3 , Tj = 125 C dv/dt 50 V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Symbol min. RthJC RthJA Values typ. max. 0.52 62 K/W Unit Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 C Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=1200, VGS=VDS VDS=600V, VGS=0V, Tj=25C, Tj=150C Values typ. 700 3 0.1 0.14 0.34 0.66 max. 3.9 600 2.1 - Unit V V(BR)DS VGS=0V, ID=24.3A A 1 100 100 0.16 nA Gate-source leakage current IGSS VGS=20, VDS =0V VGS=10V, ID=15.4A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.0 Page 2 2004-03-02 SPP24N60C3 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol g fs Ciss Coss Crss Conditions min. V DS2*I D*RDS(on)max, ID=15.4A Values typ. 21.5 3000 1000 60 141 224 13 21 140 14 max. - Unit S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance, 2) Co(er) energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time V GS=0V, V DS=0V to 480V pF td(on) tr td(off) tf V DD=380V, V GS=0/10V, ID=24.3A, R G=3.3 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=480, ID=24.3A - 12.7 45.8 104.9 5 135 - nC VDD=480V, ID=24.3A, VGS=0 to 10V V(plateau) VDD=480V, ID=24.3A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.0 Page 3 2004-03-02 SPP24N60C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt VGS=0V, IF=IS VR=480V, IF=IS , diF/dt=100A/s Symbol IS ISM Conditions min. TC=25C Values typ. 1 600 13 70 1400 max. 24.3 72.9 1.2 - Unit A V ns C A A/s Typical Transient Thermal Characteristics Symbol Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.006524 0.013 0.025 0.096 0.117 0.053 K/W Value typ. Unit Symbol Value typ. Unit Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0004439 0.001662 0.002268 0.006183 0.014 0.104 Ws/K Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Rev. 2.0 Page 4 2004-03-02 SPP24N60C3 1 Power dissipation Ptot = f (TC) 260 SPP24N60C3 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25C 10 2 W 220 200 180 A 10 1 Ptot 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 0 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 100 K/W A 10 -1 Vgs = 20V Vgs = 7.5V Vgs = 7V Vgs = 6.5V 80 Vgs = 6V Vgs = 5.5V 70 Vgs = 5V Vgs = 4.5V 60 Vgs = 4V 50 ZthJC 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse ID 10 -4 -7 10 -6 -5 -4 -3 40 30 20 10 -1 10 10 10 10 s tp 10 0 0 4 8 12 16 20 26 V VDS Rev. 2.0 Page 5 2004-03-02 SPP24N60C3 5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 50 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS 1 A RDS(on) Vgs = 20V Vgs = 6.5V Vgs = 6V Vgs = 5.5V 40 Vgs = 5V Vgs = 4.5V 35 Vgs = 4V 30 25 20 15 0.8 Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 6.5V Vgs = 20V ID 0.7 0.6 0.5 0.4 10 5 0 0 0.3 4 8 12 16 20 26 V VDS 0.2 0 5 10 15 20 25 30 35 40 A 50 ID 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 15.4 A, VGS = 10 V 1 SPP24N60C3 8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 100 0.8 A 80 70 Tj = 25C Tj = 150C RDS(on) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -60 C ID 98% typ 60 50 40 30 20 10 0 0 -20 20 60 100 180 1 2 3 4 5 6 7 8 Tj V 10 VGS Rev. 2.0 Page 6 2004-03-02 SPP24N60C3 9 Typ. gate charge VGS = f (QGate) 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPP24N60C3 parameter: ID = 24.3 A pulsed 16 V SPP24N60C3 A 12 VGS 0.8 VDS max 8 6 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 140 nC 170 10 -1 0 10 0.2 VDS max 10 1 4 2 0 0 20 40 60 80 100 120 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 28 12 Avalanche energy EAS = f (Tj) par.: ID = 10 A, VDD = 50 V 0.9 A mJ 0.7 20 EAS 16 Tj(START)=25C IAR 0.6 0.5 0.4 0.3 12 8 Tj(START)=125C 0.2 0.1 0 25 4 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 s 10 tAR 4 50 75 100 C Tj 150 Rev. 2.0 Page 7 2004-03-02 SPP24N60C3 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPP24N60C3 14 Avalanche power losses PAR = f (f ) parameter: E AR=1mJ 1000 V W V(BR)DSS 680 660 640 620 400 600 580 560 540 -60 03 10 4 5 6 PAR C 600 200 -20 20 60 100 180 10 10 Hz f 10 Tj 15 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 5 16 Typ. Coss stored energy Eoss=f(VDS) 28 pF 10 4 Ciss Coss Crss J 20 10 3 C Eoss 16 12 8 4 10 2 10 1 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Rev. 2.0 Page 8 2004-03-02 SPP24N60C3 Definition of diodes switching characteristics Rev. 2.0 Page 9 2004-03-02 SPP24N60C3 P-TO-220-3-1 B 10 0.4 3.7 0.2 A 1.270.13 4.44 15.38 0.6 2.8 0.2 C 5.23 0.9 13.5 0.5 3x 0.75 0.1 1.17 0.22 2x 2.54 0.25 M 0.5 0.1 2.510.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 Rev. 2.0 9.98 0.48 0.05 Page 10 2004-03-02 SPP24N60C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 Page 11 2004-03-02 |
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